In a significant leap forward for materials science, Nitride Global, Inc., a world leader in aluminium nitride technology, in September 2024, announced its latest advancements in aluminium oxynitride (AlON) films at the 19th International Conference on Plasma Surface Engineering (PSE ’24). The event, held in Erfurt, Germany, provided an ideal platform for Nitride Global to present a groundbreaking study conducted in collaboration with the Fraunhofer Institute for Electron Beam and Plasma Technology (FEP). The presentation, titled “Sputter Deposited Aluminium Oxynitride Films for Applications as Electrically Isolating, Thermally Conductive Films,” introduced advanced applications of AlON films, a hybrid material with significant implications for the semiconductor and power electronics industries.
Fraunhofer FEP is a world-renowned research institute specialising in electron beam and plasma technology, focusing on innovative surface coatings, materials, and plasma systems.
The research revealed that AlON films, which blend characteristics of pure aluminium nitride (AlN) and aluminium oxide (Al₂O₃), offer unique benefits for various high-tech applications. These films provide exceptional electrical isolation and high thermal conductivity, meeting the rigorous demands of power electronics, laser diodes, electronic cooling systems, and semiconductor manufacturing. Nitride Global’s breakthrough in fine-tuning AlON’s composition has led to a substrate offering superior thermal performance, excellent adhesion, and minimal stress on copper substrates, which are crucial for enhancing device reliability and longevity.
Nitride Global’s partnership with Fraunhofer FEP has driven innovations that are expected to advance both the materials and technology in semiconductor processing, enabling new efficiencies in electronic and cooling applications. This development in AlON technology represents a vital step toward more robust, reliable, and high-performing electronic components, underscoring Nitride Global’s role as a leader in the field.
Mahyar Khosravi, CEO of Nitride Global, said, “Our advancements in AlON coatings represent a significant leap forward for semiconductor devices and power electronics.”
“AlON’s unique combination of electrical isolation, adhesion, coefficient of thermal expansion (CTE) matching, and durability positions it as the ideal candidate to replace conventional Direct Bonded Copper (DBC) and Active Metal Brazed (AMB) materials in next-generation systems. We are incredibly proud of these results and our collaboration with Fraunhofer FEP.”
Nitride Global, Inc. and Fraunhofer FEP have combined their strengths in a groundbreaking collaboration, merging Nitride Global’s advanced materials expertise with Fraunhofer FEP’s state-of-the-art magnetron sputtering deposition technology. Together, they have developed a highly manufacturable, production-ready substrate material that establishes a new benchmark for performance in critical electronics applications.
Image credit: Nitride Global Website
Information credit: Nitride Global Website (Press Release)
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